/* SPDX-License-Identifier: GPL-2.0-only */ /* * Copyright © 2000-2010 David Woodhouse <[email protected]> * Steven J. Hill <[email protected]> * Thomas Gleixner <[email protected]> * * Info: * Contains standard defines and IDs for NAND flash devices * * Changelog: * See git changelog. */ #ifndef __LINUX_MTD_RAWNAND_H #define __LINUX_MTD_RAWNAND_H #include <linux/mtd/mtd.h> #include <linux/mtd/nand.h> #include <linux/mtd/flashchip.h> #include <linux/mtd/bbm.h> #include <linux/mtd/jedec.h> #include <linux/mtd/onfi.h> #include <linux/mutex.h> #include <linux/of.h> #include <linux/types.h> struct nand_chip; struct gpio_desc; /* The maximum number of NAND chips in an array */ #define NAND_MAX_CHIPS … /* * Constants for hardware specific CLE/ALE/NCE function * * These are bits which can be or'ed to set/clear multiple * bits in one go. */ /* Select the chip by setting nCE to low */ #define NAND_NCE … /* Select the command latch by setting CLE to high */ #define NAND_CLE … /* Select the address latch by setting ALE to high */ #define NAND_ALE … #define NAND_CTRL_CLE … #define NAND_CTRL_ALE … #define NAND_CTRL_CHANGE … /* * Standard NAND flash commands */ #define NAND_CMD_READ0 … #define NAND_CMD_READ1 … #define NAND_CMD_RNDOUT … #define NAND_CMD_PAGEPROG … #define NAND_CMD_READOOB … #define NAND_CMD_ERASE1 … #define NAND_CMD_STATUS … #define NAND_CMD_SEQIN … #define NAND_CMD_RNDIN … #define NAND_CMD_READID … #define NAND_CMD_ERASE2 … #define NAND_CMD_PARAM … #define NAND_CMD_GET_FEATURES … #define NAND_CMD_SET_FEATURES … #define NAND_CMD_RESET … /* Extended commands for large page devices */ #define NAND_CMD_READSTART … #define NAND_CMD_READCACHESEQ … #define NAND_CMD_READCACHEEND … #define NAND_CMD_RNDOUTSTART … #define NAND_CMD_CACHEDPROG … #define NAND_CMD_NONE … /* Status bits */ #define NAND_STATUS_FAIL … #define NAND_STATUS_FAIL_N1 … #define NAND_STATUS_TRUE_READY … #define NAND_STATUS_READY … #define NAND_STATUS_WP … #define NAND_DATA_IFACE_CHECK_ONLY … /* * Constants for Hardware ECC */ /* Reset Hardware ECC for read */ #define NAND_ECC_READ … /* Reset Hardware ECC for write */ #define NAND_ECC_WRITE … /* Enable Hardware ECC before syndrome is read back from flash */ #define NAND_ECC_READSYN … /* * Enable generic NAND 'page erased' check. This check is only done when * ecc.correct() returns -EBADMSG. * Set this flag if your implementation does not fix bitflips in erased * pages and you want to rely on the default implementation. */ #define NAND_ECC_GENERIC_ERASED_CHECK … /* * Option constants for bizarre disfunctionality and real * features. */ /* Buswidth is 16 bit */ #define NAND_BUSWIDTH_16 … /* * When using software implementation of Hamming, we can specify which byte * ordering should be used. */ #define NAND_ECC_SOFT_HAMMING_SM_ORDER … /* Chip has cache program function */ #define NAND_CACHEPRG … /* Options valid for Samsung large page devices */ #define NAND_SAMSUNG_LP_OPTIONS … /* * Chip requires ready check on read (for auto-incremented sequential read). * True only for small page devices; large page devices do not support * autoincrement. */ #define NAND_NEED_READRDY … /* Chip does not allow subpage writes */ #define NAND_NO_SUBPAGE_WRITE … /* Device is one of 'new' xD cards that expose fake nand command set */ #define NAND_BROKEN_XD … /* Device behaves just like nand, but is readonly */ #define NAND_ROM … /* Device supports subpage reads */ #define NAND_SUBPAGE_READ … /* Macros to identify the above */ #define NAND_HAS_SUBPAGE_READ(chip) … /* * Some MLC NANDs need data scrambling to limit bitflips caused by repeated * patterns. */ #define NAND_NEED_SCRAMBLING … /* Device needs 3rd row address cycle */ #define NAND_ROW_ADDR_3 … /* Non chip related options */ /* This option skips the bbt scan during initialization. */ #define NAND_SKIP_BBTSCAN … /* Chip may not exist, so silence any errors in scan */ #define NAND_SCAN_SILENT_NODEV … /* * Autodetect nand buswidth with readid/onfi. * This suppose the driver will configure the hardware in 8 bits mode * when calling nand_scan_ident, and update its configuration * before calling nand_scan_tail. */ #define NAND_BUSWIDTH_AUTO … /* * This option could be defined by controller drivers to protect against * kmap'ed, vmalloc'ed highmem buffers being passed from upper layers */ #define NAND_USES_DMA … /* * In case your controller is implementing ->legacy.cmd_ctrl() and is relying * on the default ->cmdfunc() implementation, you may want to let the core * handle the tCCS delay which is required when a column change (RNDIN or * RNDOUT) is requested. * If your controller already takes care of this delay, you don't need to set * this flag. */ #define NAND_WAIT_TCCS … /* * Whether the NAND chip is a boot medium. Drivers might use this information * to select ECC algorithms supported by the boot ROM or similar restrictions. */ #define NAND_IS_BOOT_MEDIUM … /* * Do not try to tweak the timings at runtime. This is needed when the * controller initializes the timings on itself or when it relies on * configuration done by the bootloader. */ #define NAND_KEEP_TIMINGS … /* * There are different places where the manufacturer stores the factory bad * block markers. * * Position within the block: Each of these pages needs to be checked for a * bad block marking pattern. */ #define NAND_BBM_FIRSTPAGE … #define NAND_BBM_SECONDPAGE … #define NAND_BBM_LASTPAGE … /* * Some controllers with pipelined ECC engines override the BBM marker with * data or ECC bytes, thus making bad block detection through bad block marker * impossible. Let's flag those chips so the core knows it shouldn't check the * BBM and consider all blocks good. */ #define NAND_NO_BBM_QUIRK … /* Cell info constants */ #define NAND_CI_CHIPNR_MSK … #define NAND_CI_CELLTYPE_MSK … #define NAND_CI_CELLTYPE_SHIFT … /* Position within the OOB data of the page */ #define NAND_BBM_POS_SMALL … #define NAND_BBM_POS_LARGE … /** * struct nand_parameters - NAND generic parameters from the parameter page * @model: Model name * @supports_set_get_features: The NAND chip supports setting/getting features * @supports_read_cache: The NAND chip supports read cache operations * @set_feature_list: Bitmap of features that can be set * @get_feature_list: Bitmap of features that can be get * @onfi: ONFI specific parameters */ struct nand_parameters { … }; /* The maximum expected count of bytes in the NAND ID sequence */ #define NAND_MAX_ID_LEN … /** * struct nand_id - NAND id structure * @data: buffer containing the id bytes. * @len: ID length. */ struct nand_id { … }; /** * struct nand_ecc_step_info - ECC step information of ECC engine * @stepsize: data bytes per ECC step * @strengths: array of supported strengths * @nstrengths: number of supported strengths */ struct nand_ecc_step_info { … }; /** * struct nand_ecc_caps - capability of ECC engine * @stepinfos: array of ECC step information * @nstepinfos: number of ECC step information * @calc_ecc_bytes: driver's hook to calculate ECC bytes per step */ struct nand_ecc_caps { … }; /* a shorthand to generate struct nand_ecc_caps with only one ECC stepsize */ #define NAND_ECC_CAPS_SINGLE(__name, __calc, __step, ...) … /** * struct nand_ecc_ctrl - Control structure for ECC * @engine_type: ECC engine type * @placement: OOB bytes placement * @algo: ECC algorithm * @steps: number of ECC steps per page * @size: data bytes per ECC step * @bytes: ECC bytes per step * @strength: max number of correctible bits per ECC step * @total: total number of ECC bytes per page * @prepad: padding information for syndrome based ECC generators * @postpad: padding information for syndrome based ECC generators * @options: ECC specific options (see NAND_ECC_XXX flags defined above) * @calc_buf: buffer for calculated ECC, size is oobsize. * @code_buf: buffer for ECC read from flash, size is oobsize. * @hwctl: function to control hardware ECC generator. Must only * be provided if an hardware ECC is available * @calculate: function for ECC calculation or readback from ECC hardware * @correct: function for ECC correction, matching to ECC generator (sw/hw). * Should return a positive number representing the number of * corrected bitflips, -EBADMSG if the number of bitflips exceed * ECC strength, or any other error code if the error is not * directly related to correction. * If -EBADMSG is returned the input buffers should be left * untouched. * @read_page_raw: function to read a raw page without ECC. This function * should hide the specific layout used by the ECC * controller and always return contiguous in-band and * out-of-band data even if they're not stored * contiguously on the NAND chip (e.g. * NAND_ECC_PLACEMENT_INTERLEAVED interleaves in-band and * out-of-band data). * @write_page_raw: function to write a raw page without ECC. This function * should hide the specific layout used by the ECC * controller and consider the passed data as contiguous * in-band and out-of-band data. ECC controller is * responsible for doing the appropriate transformations * to adapt to its specific layout (e.g. * NAND_ECC_PLACEMENT_INTERLEAVED interleaves in-band and * out-of-band data). * @read_page: function to read a page according to the ECC generator * requirements; returns maximum number of bitflips corrected in * any single ECC step, -EIO hw error * @read_subpage: function to read parts of the page covered by ECC; * returns same as read_page() * @write_subpage: function to write parts of the page covered by ECC. * @write_page: function to write a page according to the ECC generator * requirements. * @write_oob_raw: function to write chip OOB data without ECC * @read_oob_raw: function to read chip OOB data without ECC * @read_oob: function to read chip OOB data * @write_oob: function to write chip OOB data */ struct nand_ecc_ctrl { … }; /** * struct nand_sdr_timings - SDR NAND chip timings * * This struct defines the timing requirements of a SDR NAND chip. * These information can be found in every NAND datasheets and the timings * meaning are described in the ONFI specifications: * https://media-www.micron.com/-/media/client/onfi/specs/onfi_3_1_spec.pdf * (chapter 4.15 Timing Parameters) * * All these timings are expressed in picoseconds. * * @tBERS_max: Block erase time * @tCCS_min: Change column setup time * @tPROG_max: Page program time * @tR_max: Page read time * @tALH_min: ALE hold time * @tADL_min: ALE to data loading time * @tALS_min: ALE setup time * @tAR_min: ALE to RE# delay * @tCEA_max: CE# access time * @tCEH_min: CE# high hold time * @tCH_min: CE# hold time * @tCHZ_max: CE# high to output hi-Z * @tCLH_min: CLE hold time * @tCLR_min: CLE to RE# delay * @tCLS_min: CLE setup time * @tCOH_min: CE# high to output hold * @tCS_min: CE# setup time * @tDH_min: Data hold time * @tDS_min: Data setup time * @tFEAT_max: Busy time for Set Features and Get Features * @tIR_min: Output hi-Z to RE# low * @tITC_max: Interface and Timing Mode Change time * @tRC_min: RE# cycle time * @tREA_max: RE# access time * @tREH_min: RE# high hold time * @tRHOH_min: RE# high to output hold * @tRHW_min: RE# high to WE# low * @tRHZ_max: RE# high to output hi-Z * @tRLOH_min: RE# low to output hold * @tRP_min: RE# pulse width * @tRR_min: Ready to RE# low (data only) * @tRST_max: Device reset time, measured from the falling edge of R/B# to the * rising edge of R/B#. * @tWB_max: WE# high to SR[6] low * @tWC_min: WE# cycle time * @tWH_min: WE# high hold time * @tWHR_min: WE# high to RE# low * @tWP_min: WE# pulse width * @tWW_min: WP# transition to WE# low */ struct nand_sdr_timings { … }; /** * struct nand_nvddr_timings - NV-DDR NAND chip timings * * This struct defines the timing requirements of a NV-DDR NAND data interface. * These information can be found in every NAND datasheets and the timings * meaning are described in the ONFI specifications: * https://media-www.micron.com/-/media/client/onfi/specs/onfi_4_1_gold.pdf * (chapter 4.18.2 NV-DDR) * * All these timings are expressed in picoseconds. * * @tBERS_max: Block erase time * @tCCS_min: Change column setup time * @tPROG_max: Page program time * @tR_max: Page read time * @tAC_min: Access window of DQ[7:0] from CLK * @tAC_max: Access window of DQ[7:0] from CLK * @tADL_min: ALE to data loading time * @tCAD_min: Command, Address, Data delay * @tCAH_min: Command/Address DQ hold time * @tCALH_min: W/R_n, CLE and ALE hold time * @tCALS_min: W/R_n, CLE and ALE setup time * @tCAS_min: Command/address DQ setup time * @tCEH_min: CE# high hold time * @tCH_min: CE# hold time * @tCK_min: Average clock cycle time * @tCS_min: CE# setup time * @tDH_min: Data hold time * @tDQSCK_min: Start of the access window of DQS from CLK * @tDQSCK_max: End of the access window of DQS from CLK * @tDQSD_min: Min W/R_n low to DQS/DQ driven by device * @tDQSD_max: Max W/R_n low to DQS/DQ driven by device * @tDQSHZ_max: W/R_n high to DQS/DQ tri-state by device * @tDQSQ_max: DQS-DQ skew, DQS to last DQ valid, per access * @tDS_min: Data setup time * @tDSC_min: DQS cycle time * @tFEAT_max: Busy time for Set Features and Get Features * @tITC_max: Interface and Timing Mode Change time * @tQHS_max: Data hold skew factor * @tRHW_min: Data output cycle to command, address, or data input cycle * @tRR_min: Ready to RE# low (data only) * @tRST_max: Device reset time, measured from the falling edge of R/B# to the * rising edge of R/B#. * @tWB_max: WE# high to SR[6] low * @tWHR_min: WE# high to RE# low * @tWRCK_min: W/R_n low to data output cycle * @tWW_min: WP# transition to WE# low */ struct nand_nvddr_timings { … }; /* * While timings related to the data interface itself are mostly different * between SDR and NV-DDR, timings related to the internal chip behavior are * common. IOW, the following entries which describe the internal delays have * the same definition and are shared in both SDR and NV-DDR timing structures: * - tADL_min * - tBERS_max * - tCCS_min * - tFEAT_max * - tPROG_max * - tR_max * - tRR_min * - tRST_max * - tWB_max * * The below macros return the value of a given timing, no matter the interface. */ #define NAND_COMMON_TIMING_PS(conf, timing_name) … #define NAND_COMMON_TIMING_MS(conf, timing_name) … #define NAND_COMMON_TIMING_NS(conf, timing_name) … /** * enum nand_interface_type - NAND interface type * @NAND_SDR_IFACE: Single Data Rate interface * @NAND_NVDDR_IFACE: Double Data Rate interface */ enum nand_interface_type { … }; /** * struct nand_interface_config - NAND interface timing * @type: type of the timing * @timings: The timing information * @timings.mode: Timing mode as defined in the specification * @timings.sdr: Use it when @type is %NAND_SDR_IFACE. * @timings.nvddr: Use it when @type is %NAND_NVDDR_IFACE. */ struct nand_interface_config { … }; /** * nand_interface_is_sdr - get the interface type * @conf: The data interface */ static bool nand_interface_is_sdr(const struct nand_interface_config *conf) { … } /** * nand_interface_is_nvddr - get the interface type * @conf: The data interface */ static bool nand_interface_is_nvddr(const struct nand_interface_config *conf) { … } /** * nand_get_sdr_timings - get SDR timing from data interface * @conf: The data interface */ static inline const struct nand_sdr_timings * nand_get_sdr_timings(const struct nand_interface_config *conf) { … } /** * nand_get_nvddr_timings - get NV-DDR timing from data interface * @conf: The data interface */ static inline const struct nand_nvddr_timings * nand_get_nvddr_timings(const struct nand_interface_config *conf) { … } /** * struct nand_op_cmd_instr - Definition of a command instruction * @opcode: the command to issue in one cycle */ struct nand_op_cmd_instr { … }; /** * struct nand_op_addr_instr - Definition of an address instruction * @naddrs: length of the @addrs array * @addrs: array containing the address cycles to issue */ struct nand_op_addr_instr { … }; /** * struct nand_op_data_instr - Definition of a data instruction * @len: number of data bytes to move * @buf: buffer to fill * @buf.in: buffer to fill when reading from the NAND chip * @buf.out: buffer to read from when writing to the NAND chip * @force_8bit: force 8-bit access * * Please note that "in" and "out" are inverted from the ONFI specification * and are from the controller perspective, so a "in" is a read from the NAND * chip while a "out" is a write to the NAND chip. */ struct nand_op_data_instr { … }; /** * struct nand_op_waitrdy_instr - Definition of a wait ready instruction * @timeout_ms: maximum delay while waiting for the ready/busy pin in ms */ struct nand_op_waitrdy_instr { … }; /** * enum nand_op_instr_type - Definition of all instruction types * @NAND_OP_CMD_INSTR: command instruction * @NAND_OP_ADDR_INSTR: address instruction * @NAND_OP_DATA_IN_INSTR: data in instruction * @NAND_OP_DATA_OUT_INSTR: data out instruction * @NAND_OP_WAITRDY_INSTR: wait ready instruction */ enum nand_op_instr_type { … }; /** * struct nand_op_instr - Instruction object * @type: the instruction type * @ctx: extra data associated to the instruction. You'll have to use the * appropriate element depending on @type * @ctx.cmd: use it if @type is %NAND_OP_CMD_INSTR * @ctx.addr: use it if @type is %NAND_OP_ADDR_INSTR * @ctx.data: use it if @type is %NAND_OP_DATA_IN_INSTR * or %NAND_OP_DATA_OUT_INSTR * @ctx.waitrdy: use it if @type is %NAND_OP_WAITRDY_INSTR * @delay_ns: delay the controller should apply after the instruction has been * issued on the bus. Most modern controllers have internal timings * control logic, and in this case, the controller driver can ignore * this field. */ struct nand_op_instr { … }; /* * Special handling must be done for the WAITRDY timeout parameter as it usually * is either tPROG (after a prog), tR (before a read), tRST (during a reset) or * tBERS (during an erase) which all of them are u64 values that cannot be * divided by usual kernel macros and must be handled with the special * DIV_ROUND_UP_ULL() macro. * * Cast to type of dividend is needed here to guarantee that the result won't * be an unsigned long long when the dividend is an unsigned long (or smaller), * which is what the compiler does when it sees ternary operator with 2 * different return types (picks the largest type to make sure there's no * loss). */ #define __DIVIDE(dividend, divisor) … #define PSEC_TO_NSEC(x) … #define PSEC_TO_MSEC(x) … #define NAND_OP_CMD(id, ns) … #define NAND_OP_ADDR(ncycles, cycles, ns) … #define NAND_OP_DATA_IN(l, b, ns) … #define NAND_OP_DATA_OUT(l, b, ns) … #define NAND_OP_8BIT_DATA_IN(l, b, ns) … #define NAND_OP_8BIT_DATA_OUT(l, b, ns) … #define NAND_OP_WAIT_RDY(tout_ms, ns) … /** * struct nand_subop - a sub operation * @cs: the CS line to select for this NAND sub-operation * @instrs: array of instructions * @ninstrs: length of the @instrs array * @first_instr_start_off: offset to start from for the first instruction * of the sub-operation * @last_instr_end_off: offset to end at (excluded) for the last instruction * of the sub-operation * * Both @first_instr_start_off and @last_instr_end_off only apply to data or * address instructions. * * When an operation cannot be handled as is by the NAND controller, it will * be split by the parser into sub-operations which will be passed to the * controller driver. */ struct nand_subop { … }; unsigned int nand_subop_get_addr_start_off(const struct nand_subop *subop, unsigned int op_id); unsigned int nand_subop_get_num_addr_cyc(const struct nand_subop *subop, unsigned int op_id); unsigned int nand_subop_get_data_start_off(const struct nand_subop *subop, unsigned int op_id); unsigned int nand_subop_get_data_len(const struct nand_subop *subop, unsigned int op_id); /** * struct nand_op_parser_addr_constraints - Constraints for address instructions * @maxcycles: maximum number of address cycles the controller can issue in a * single step */ struct nand_op_parser_addr_constraints { … }; /** * struct nand_op_parser_data_constraints - Constraints for data instructions * @maxlen: maximum data length that the controller can handle in a single step */ struct nand_op_parser_data_constraints { … }; /** * struct nand_op_parser_pattern_elem - One element of a pattern * @type: the instructuction type * @optional: whether this element of the pattern is optional or mandatory * @ctx: address or data constraint * @ctx.addr: address constraint (number of cycles) * @ctx.data: data constraint (data length) */ struct nand_op_parser_pattern_elem { … }; #define NAND_OP_PARSER_PAT_CMD_ELEM(_opt) … #define NAND_OP_PARSER_PAT_ADDR_ELEM(_opt, _maxcycles) … #define NAND_OP_PARSER_PAT_DATA_IN_ELEM(_opt, _maxlen) … #define NAND_OP_PARSER_PAT_DATA_OUT_ELEM(_opt, _maxlen) … #define NAND_OP_PARSER_PAT_WAITRDY_ELEM(_opt) … /** * struct nand_op_parser_pattern - NAND sub-operation pattern descriptor * @elems: array of pattern elements * @nelems: number of pattern elements in @elems array * @exec: the function that will issue a sub-operation * * A pattern is a list of elements, each element reprensenting one instruction * with its constraints. The pattern itself is used by the core to match NAND * chip operation with NAND controller operations. * Once a match between a NAND controller operation pattern and a NAND chip * operation (or a sub-set of a NAND operation) is found, the pattern ->exec() * hook is called so that the controller driver can issue the operation on the * bus. * * Controller drivers should declare as many patterns as they support and pass * this list of patterns (created with the help of the following macro) to * the nand_op_parser_exec_op() helper. */ struct nand_op_parser_pattern { … }; #define NAND_OP_PARSER_PATTERN(_exec, ...) … /** * struct nand_op_parser - NAND controller operation parser descriptor * @patterns: array of supported patterns * @npatterns: length of the @patterns array * * The parser descriptor is just an array of supported patterns which will be * iterated by nand_op_parser_exec_op() everytime it tries to execute an * NAND operation (or tries to determine if a specific operation is supported). * * It is worth mentioning that patterns will be tested in their declaration * order, and the first match will be taken, so it's important to order patterns * appropriately so that simple/inefficient patterns are placed at the end of * the list. Usually, this is where you put single instruction patterns. */ struct nand_op_parser { … }; #define NAND_OP_PARSER(...) … /** * struct nand_operation - NAND operation descriptor * @cs: the CS line to select for this NAND operation * @deassert_wp: set to true when the operation requires the WP pin to be * de-asserted (ERASE, PROG, ...) * @instrs: array of instructions to execute * @ninstrs: length of the @instrs array * * The actual operation structure that will be passed to chip->exec_op(). */ struct nand_operation { … }; #define NAND_OPERATION(_cs, _instrs) … #define NAND_DESTRUCTIVE_OPERATION(_cs, _instrs) … int nand_op_parser_exec_op(struct nand_chip *chip, const struct nand_op_parser *parser, const struct nand_operation *op, bool check_only); static inline void nand_op_trace(const char *prefix, const struct nand_op_instr *instr) { … } /** * struct nand_controller_ops - Controller operations * * @attach_chip: this method is called after the NAND detection phase after * flash ID and MTD fields such as erase size, page size and OOB * size have been set up. ECC requirements are available if * provided by the NAND chip or device tree. Typically used to * choose the appropriate ECC configuration and allocate * associated resources. * This hook is optional. * @detach_chip: free all resources allocated/claimed in * nand_controller_ops->attach_chip(). * This hook is optional. * @exec_op: controller specific method to execute NAND operations. * This method replaces chip->legacy.cmdfunc(), * chip->legacy.{read,write}_{buf,byte,word}(), * chip->legacy.dev_ready() and chip->legacy.waitfunc(). * @setup_interface: setup the data interface and timing. If chipnr is set to * %NAND_DATA_IFACE_CHECK_ONLY this means the configuration * should not be applied but only checked. * This hook is optional. */ struct nand_controller_ops { … }; /** * struct nand_controller - Structure used to describe a NAND controller * * @lock: lock used to serialize accesses to the NAND controller * @ops: NAND controller operations. * @supported_op: NAND controller known-to-be-supported operations, * only writable by the core after initial checking. * @supported_op.data_only_read: The controller supports reading more data from * the bus without restarting an entire read operation nor * changing the column. * @supported_op.cont_read: The controller supports sequential cache reads. * @controller_wp: the controller is in charge of handling the WP pin. */ struct nand_controller { … }; static inline void nand_controller_init(struct nand_controller *nfc) { … } /** * struct nand_legacy - NAND chip legacy fields/hooks * @IO_ADDR_R: address to read the 8 I/O lines of the flash device * @IO_ADDR_W: address to write the 8 I/O lines of the flash device * @select_chip: select/deselect a specific target/die * @read_byte: read one byte from the chip * @write_byte: write a single byte to the chip on the low 8 I/O lines * @write_buf: write data from the buffer to the chip * @read_buf: read data from the chip into the buffer * @cmd_ctrl: hardware specific function for controlling ALE/CLE/nCE. Also used * to write command and address * @cmdfunc: hardware specific function for writing commands to the chip. * @dev_ready: hardware specific function for accessing device ready/busy line. * If set to NULL no access to ready/busy is available and the * ready/busy information is read from the chip status register. * @waitfunc: hardware specific function for wait on ready. * @block_bad: check if a block is bad, using OOB markers * @block_markbad: mark a block bad * @set_features: set the NAND chip features * @get_features: get the NAND chip features * @chip_delay: chip dependent delay for transferring data from array to read * regs (tR). * @dummy_controller: dummy controller implementation for drivers that can * only control a single chip * * If you look at this structure you're already wrong. These fields/hooks are * all deprecated. */ struct nand_legacy { … }; /** * struct nand_chip_ops - NAND chip operations * @suspend: Suspend operation * @resume: Resume operation * @lock_area: Lock operation * @unlock_area: Unlock operation * @setup_read_retry: Set the read-retry mode (mostly needed for MLC NANDs) * @choose_interface_config: Choose the best interface configuration */ struct nand_chip_ops { … }; /** * struct nand_manufacturer - NAND manufacturer structure * @desc: The manufacturer description * @priv: Private information for the manufacturer driver */ struct nand_manufacturer { … }; /** * struct nand_secure_region - NAND secure region structure * @offset: Offset of the start of the secure region * @size: Size of the secure region */ struct nand_secure_region { … }; /** * struct nand_chip - NAND Private Flash Chip Data * @base: Inherit from the generic NAND device * @id: Holds NAND ID * @parameters: Holds generic parameters under an easily readable form * @manufacturer: Manufacturer information * @ops: NAND chip operations * @legacy: All legacy fields/hooks. If you develop a new driver, don't even try * to use any of these fields/hooks, and if you're modifying an * existing driver that is using those fields/hooks, you should * consider reworking the driver and avoid using them. * @options: Various chip options. They can partly be set to inform nand_scan * about special functionality. See the defines for further * explanation. * @current_interface_config: The currently used NAND interface configuration * @best_interface_config: The best NAND interface configuration which fits both * the NAND chip and NAND controller constraints. If * unset, the default reset interface configuration must * be used. * @bbt_erase_shift: Number of address bits in a bbt entry * @bbt_options: Bad block table specific options. All options used here must * come from bbm.h. By default, these options will be copied to * the appropriate nand_bbt_descr's. * @badblockpos: Bad block marker position in the oob area * @badblockbits: Minimum number of set bits in a good block's bad block marker * position; i.e., BBM = 11110111b is good when badblockbits = 7 * @bbt_td: Bad block table descriptor for flash lookup * @bbt_md: Bad block table mirror descriptor * @badblock_pattern: Bad block scan pattern used for initial bad block scan * @bbt: Bad block table pointer * @page_shift: Number of address bits in a page (column address bits) * @phys_erase_shift: Number of address bits in a physical eraseblock * @chip_shift: Number of address bits in one chip * @pagemask: Page number mask = number of (pages / chip) - 1 * @subpagesize: Holds the subpagesize * @data_buf: Buffer for data, size is (page size + oobsize) * @oob_poi: pointer on the OOB area covered by data_buf * @pagecache: Structure containing page cache related fields * @pagecache.bitflips: Number of bitflips of the cached page * @pagecache.page: Page number currently in the cache. -1 means no page is * currently cached * @buf_align: Minimum buffer alignment required by a platform * @lock: Lock protecting the suspended field. Also used to serialize accesses * to the NAND device * @suspended: Set to 1 when the device is suspended, 0 when it's not * @resume_wq: wait queue to sleep if rawnand is in suspended state. * @cur_cs: Currently selected target. -1 means no target selected, otherwise we * should always have cur_cs >= 0 && cur_cs < nanddev_ntargets(). * NAND Controller drivers should not modify this value, but they're * allowed to read it. * @read_retries: The number of read retry modes supported * @secure_regions: Structure containing the secure regions info * @nr_secure_regions: Number of secure regions * @cont_read: Sequential page read internals * @cont_read.ongoing: Whether a continuous read is ongoing or not * @cont_read.first_page: Start of the continuous read operation * @cont_read.pause_page: End of the current sequential cache read operation * @cont_read.last_page: End of the continuous read operation * @controller: The hardware controller structure which is shared among multiple * independent devices * @ecc: The ECC controller structure * @priv: Chip private data */ struct nand_chip { … }; static inline struct nand_chip *mtd_to_nand(struct mtd_info *mtd) { … } static inline struct mtd_info *nand_to_mtd(struct nand_chip *chip) { … } static inline void *nand_get_controller_data(struct nand_chip *chip) { … } static inline void nand_set_controller_data(struct nand_chip *chip, void *priv) { … } static inline void nand_set_manufacturer_data(struct nand_chip *chip, void *priv) { … } static inline void *nand_get_manufacturer_data(struct nand_chip *chip) { … } static inline void nand_set_flash_node(struct nand_chip *chip, struct device_node *np) { … } static inline struct device_node *nand_get_flash_node(struct nand_chip *chip) { … } /** * nand_get_interface_config - Retrieve the current interface configuration * of a NAND chip * @chip: The NAND chip */ static inline const struct nand_interface_config * nand_get_interface_config(struct nand_chip *chip) { … } /* * A helper for defining older NAND chips where the second ID byte fully * defined the chip, including the geometry (chip size, eraseblock size, page * size). All these chips have 512 bytes NAND page size. */ #define LEGACY_ID_NAND(nm, devid, chipsz, erasesz, opts) … /* * A helper for defining newer chips which report their page size and * eraseblock size via the extended ID bytes. * * The real difference between LEGACY_ID_NAND and EXTENDED_ID_NAND is that with * EXTENDED_ID_NAND, manufacturers overloaded the same device ID so that the * device ID now only represented a particular total chip size (and voltage, * buswidth), and the page size, eraseblock size, and OOB size could vary while * using the same device ID. */ #define EXTENDED_ID_NAND(nm, devid, chipsz, opts) … #define NAND_ECC_INFO(_strength, _step) … #define NAND_ECC_STRENGTH(type) … #define NAND_ECC_STEP(type) … /** * struct nand_flash_dev - NAND Flash Device ID Structure * @name: a human-readable name of the NAND chip * @dev_id: the device ID (the second byte of the full chip ID array) * @mfr_id: manufacturer ID part of the full chip ID array (refers the same * memory address as ``id[0]``) * @dev_id: device ID part of the full chip ID array (refers the same memory * address as ``id[1]``) * @id: full device ID array * @pagesize: size of the NAND page in bytes; if 0, then the real page size (as * well as the eraseblock size) is determined from the extended NAND * chip ID array) * @chipsize: total chip size in MiB * @erasesize: eraseblock size in bytes (determined from the extended ID if 0) * @options: stores various chip bit options * @id_len: The valid length of the @id. * @oobsize: OOB size * @ecc: ECC correctability and step information from the datasheet. * @ecc.strength_ds: The ECC correctability from the datasheet, same as the * @ecc_strength_ds in nand_chip{}. * @ecc.step_ds: The ECC step required by the @ecc.strength_ds, same as the * @ecc_step_ds in nand_chip{}, also from the datasheet. * For example, the "4bit ECC for each 512Byte" can be set with * NAND_ECC_INFO(4, 512). */ struct nand_flash_dev { … }; int nand_create_bbt(struct nand_chip *chip); /* * Check if it is a SLC nand. * The !nand_is_slc() can be used to check the MLC/TLC nand chips. * We do not distinguish the MLC and TLC now. */ static inline bool nand_is_slc(struct nand_chip *chip) { … } /** * nand_opcode_8bits - Check if the opcode's address should be sent only on the * lower 8 bits * @command: opcode to check */ static inline int nand_opcode_8bits(unsigned int command) { … } int rawnand_sw_hamming_init(struct nand_chip *chip); int rawnand_sw_hamming_calculate(struct nand_chip *chip, const unsigned char *buf, unsigned char *code); int rawnand_sw_hamming_correct(struct nand_chip *chip, unsigned char *buf, unsigned char *read_ecc, unsigned char *calc_ecc); void rawnand_sw_hamming_cleanup(struct nand_chip *chip); int rawnand_sw_bch_init(struct nand_chip *chip); int rawnand_sw_bch_correct(struct nand_chip *chip, unsigned char *buf, unsigned char *read_ecc, unsigned char *calc_ecc); void rawnand_sw_bch_cleanup(struct nand_chip *chip); int nand_check_erased_ecc_chunk(void *data, int datalen, void *ecc, int ecclen, void *extraoob, int extraooblen, int threshold); int nand_ecc_choose_conf(struct nand_chip *chip, const struct nand_ecc_caps *caps, int oobavail); /* Default write_oob implementation */ int nand_write_oob_std(struct nand_chip *chip, int page); /* Default read_oob implementation */ int nand_read_oob_std(struct nand_chip *chip, int page); /* Stub used by drivers that do not support GET/SET FEATURES operations */ int nand_get_set_features_notsupp(struct nand_chip *chip, int addr, u8 *subfeature_param); /* read_page_raw implementations */ int nand_read_page_raw(struct nand_chip *chip, uint8_t *buf, int oob_required, int page); int nand_monolithic_read_page_raw(struct nand_chip *chip, uint8_t *buf, int oob_required, int page); /* write_page_raw implementations */ int nand_write_page_raw(struct nand_chip *chip, const uint8_t *buf, int oob_required, int page); int nand_monolithic_write_page_raw(struct nand_chip *chip, const uint8_t *buf, int oob_required, int page); /* Reset and initialize a NAND device */ int nand_reset(struct nand_chip *chip, int chipnr); /* NAND operation helpers */ int nand_reset_op(struct nand_chip *chip); int nand_readid_op(struct nand_chip *chip, u8 addr, void *buf, unsigned int len); int nand_status_op(struct nand_chip *chip, u8 *status); int nand_exit_status_op(struct nand_chip *chip); int nand_erase_op(struct nand_chip *chip, unsigned int eraseblock); int nand_read_page_op(struct nand_chip *chip, unsigned int page, unsigned int offset_in_page, void *buf, unsigned int len); int nand_change_read_column_op(struct nand_chip *chip, unsigned int offset_in_page, void *buf, unsigned int len, bool force_8bit); int nand_read_oob_op(struct nand_chip *chip, unsigned int page, unsigned int offset_in_page, void *buf, unsigned int len); int nand_prog_page_begin_op(struct nand_chip *chip, unsigned int page, unsigned int offset_in_page, const void *buf, unsigned int len); int nand_prog_page_end_op(struct nand_chip *chip); int nand_prog_page_op(struct nand_chip *chip, unsigned int page, unsigned int offset_in_page, const void *buf, unsigned int len); int nand_change_write_column_op(struct nand_chip *chip, unsigned int offset_in_page, const void *buf, unsigned int len, bool force_8bit); int nand_read_data_op(struct nand_chip *chip, void *buf, unsigned int len, bool force_8bit, bool check_only); int nand_write_data_op(struct nand_chip *chip, const void *buf, unsigned int len, bool force_8bit); int nand_read_page_hwecc_oob_first(struct nand_chip *chip, uint8_t *buf, int oob_required, int page); /* Scan and identify a NAND device */ int nand_scan_with_ids(struct nand_chip *chip, unsigned int max_chips, struct nand_flash_dev *ids); static inline int nand_scan(struct nand_chip *chip, unsigned int max_chips) { … } /* Internal helper for board drivers which need to override command function */ void nand_wait_ready(struct nand_chip *chip); /* * Free resources held by the NAND device, must be called on error after a * sucessful nand_scan(). */ void nand_cleanup(struct nand_chip *chip); /* * External helper for controller drivers that have to implement the WAITRDY * instruction and have no physical pin to check it. */ int nand_soft_waitrdy(struct nand_chip *chip, unsigned long timeout_ms); int nand_gpio_waitrdy(struct nand_chip *chip, struct gpio_desc *gpiod, unsigned long timeout_ms); /* Select/deselect a NAND target. */ void nand_select_target(struct nand_chip *chip, unsigned int cs); void nand_deselect_target(struct nand_chip *chip); /* Bitops */ void nand_extract_bits(u8 *dst, unsigned int dst_off, const u8 *src, unsigned int src_off, unsigned int nbits); /** * nand_get_data_buf() - Get the internal page buffer * @chip: NAND chip object * * Returns the pre-allocated page buffer after invalidating the cache. This * function should be used by drivers that do not want to allocate their own * bounce buffer and still need such a buffer for specific operations (most * commonly when reading OOB data only). * * Be careful to never call this function in the write/write_oob path, because * the core may have placed the data to be written out in this buffer. * * Return: pointer to the page cache buffer */ static inline void *nand_get_data_buf(struct nand_chip *chip) { … } /* Parse the gpio-cs property */ int rawnand_dt_parse_gpio_cs(struct device *dev, struct gpio_desc ***cs_array, unsigned int *ncs_array); #endif /* __LINUX_MTD_RAWNAND_H */
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